Carbon nanotube thin film transistor and manufacturing method thereof
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United States of America Patent
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Aug 13, 2019
Grant Date -
Dec 13, 2018
app pub date -
Aug 17, 2016
filing date -
Mar 1, 2016
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Abstract
The present disclosure provides a carbon nanotube thin film transistor (CNT-TFT) and its manufacturing method. The carbon nanotube thin film transistor includes a source electrode, a drain electrode, a channel region, a plurality of protrusions, and a carbon nanotube layer. The channel region is between the source electrode and the drain electrode. The plurality of protrusions are at, and extend in a length direction of, the channel region. The carbon nanotube layer is disposed over the plurality of protrusions, and comprises a plurality of carbon nanotubes.
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