Shield indent trench termination for shielded gate MOSFETs
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United States of America Patent
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Aug 6, 2019
Grant Date -
Jan 3, 2019
app pub date -
Jun 30, 2017
filing date -
Jun 30, 2017
priority date (Note) -
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Abstract
In a general aspect, a power semiconductor device can include a semiconductor region having an active region and a termination region. The device can also include a plurality of trench shield electrodes each having a first portion disposed in the active region and a second portion disposed in the termination region. One or more of the trench shield electrodes can have a second portion that extends a first distance into the termination region, while one or more other trench shield electrodes can have a second portion that extends a second distance into the termination region, the second distance being less than the first distance. The trench shield electrode(s) having the second portion that extends the second distance into the termination region can be interleaved with the trench shield electrode(s) having the second portion that extends the first distance into the termination region.
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