Semiconductor devices and methods for forming patterned radiation blocking on a semiconductor device
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United States of America Patent
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Aug 6, 2019
Grant Date -
Nov 2, 2017
app pub date -
Jul 18, 2017
filing date -
Mar 24, 2009
priority date (Note) -
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Abstract
Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.
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