Electronic device including a semiconductor memory having a variable resistance element including two free layers
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United States of America Patent
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Jul 30, 2019
Grant Date -
Jul 13, 2017
app pub date -
Mar 24, 2017
filing date -
Dec 17, 2014
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Abstract
Disclosed are an electronic device comprising a semiconductor memory. The semiconductor memory includes a variable resistance element including a free layer having a variable magnetization direction; a pinned layer having a fixed magnetization direction; and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein the free layer includes: a first free layer adjacent to the tunnel barrier layer and having a perpendicular magnetic anisotropy at an interface with the tunnel barrier layer; and a second free layer spaced apart from the tunnel barrier layer by the first free layer and having a saturation magnetization lower than a saturation magnetization of the first free layer.
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