Vapor phase growth method
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United States of America Patent
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Jul 16, 2019
Grant Date -
Jun 21, 2018
app pub date -
Dec 20, 2017
filing date -
Dec 21, 2016
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Abstract
A vapor phase growth method according to an embodiment is a vapor phase growth method of forming on a single substrate a film having a composition different from a composition of the substrate. The method includes, rotating the single substrate with a center of the single substrate being a rotation center, heating a single substrate to a first temperature, and forming a silicon carbide film having a film thickness of 10 nm or more and 200 nm or less on a surface of the single substrate by supplying a first process gas containing silicon and carbon as a laminar flow in a direction substantially perpendicular to the surface of the single substrate.
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