Semiconductor device and method for fabricating the same
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United States of America Patent
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Jul 2, 2019
Grant Date -
Jan 3, 2019
app pub date -
Jun 29, 2017
filing date -
Jun 29, 2017
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Abstract
A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.
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