Method of making a semiconductor device
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United States of America Patent
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Jun 25, 2019
Grant Date -
Dec 15, 2016
app pub date -
May 24, 2016
filing date -
Jun 12, 2015
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Abstract
A method of making a semiconductor device includes:
- (a) providing a semiconductor substrate that is made from a material containing an element of boron group;(b) forming on the semiconductor substrate a buffer structure that includes an aluminum nitride buffer film formed using a physical vapor deposition technique; and(c) forming on the buffer structure a semiconductor unit that includes a GaN-based epitaxial layer, the GaN-based epitaxial layer having a hexagonal crystal structure and being formed using a chemical vapor deposition technique.
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