Stratified quantum dot phosphor structure
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United States of America Patent
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Jun 11, 2019
Grant Date -
May 17, 2018
app pub date -
Dec 21, 2017
filing date -
Oct 31, 2014
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Abstract
A method is presented for fabricating a light emitting diode (LED) device with a stratified quantum dot (QD) structure. The method provides an LED and a stratified QD structure is formed as follows. A first liquid precursor is deposited overlying the LED emission surface to form a transparent first barrier layer. A second liquid precursor is deposited overlying the first barrier layer to form a first layer of discrete QDs. A third liquid precursor is deposited overlying the first layer of QDs to form a transparent second barrier layer. Subsequent to each barrier layer liquid precursor deposition, an annealing is performed to cure the deposited precursor. The first and second barrier layers act to encapsulate the first layer of QDs. The LED emits a first wavelength of light, and the first layer of QDs converts the first wavelength of light to a first color of light in the visible spectrum.
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