Transistor element including a buried insulating layer having enhanced functionality
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United States of America Patent
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Jun 11, 2019
Grant Date -
Dec 20, 2018
app pub date -
Jun 14, 2017
filing date -
Jun 14, 2017
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Abstract
In sophisticated SOI transistor elements, the buried insulating layer may be specifically engineered so as to include non-standard dielectric materials. For instance, a charge-trapping material and/or a high-k dielectric material and/or a ferroelectric material may be incorporated into the buried insulating layer. In this manner, non-volatile storage transistor elements with superior performance may be obtained and/or efficiency of a back-bias mechanism may be improved.
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