precursor and silicon-containing precursor
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United States of America Patent
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Jun 4, 2019
Grant Date -
Jun 14, 2018
app pub date -
Dec 5, 2017
filing date -
Dec 12, 2016
priority date (Note) -
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Abstract
The present disclosure generally relates to methods of selectively forming titanium silicides on substrates. The methods are generally utilized in conjunction with contact structure integration schemes. In one embodiment, a titanium silicide material is selectively formed on a substrate as an interfacial layer on a source/drain region. The titanium silicide layer may be formed at a temperature within range of about 400 degrees Celsius to about 500 degrees Celsius.
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