Semiconductor structure with an L-shaped bottom
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United States of America Patent
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May 28, 2019
Grant Date -
Dec 1, 2016
app pub date -
Jul 18, 2016
filing date -
Sep 25, 2014
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Abstract
A method of forming a semiconductor structure is provided. The method including forming a first vertical channel on a first layer of source/drain material that is perpendicular relative to the first vertical channel, and forming a first source/drain semiconductor structure by removing one or more portions of the first layer of source/drain material such that i) the first source/drain semiconductor structure has a vertical side that is substantially planar with a vertical side of the first vertical channel and ii) a width of the source/drain is greater than a width of the first vertical channel, wherein the first source/drain semiconductor structure extends perpendicularly from its vertical side farther than the first vertical channel extends perpendicularly from its vertical side.
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