Reading circuit for resistive memory

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United States of America Patent

PATENT NO 10304529
APP PUB NO 20170271005A1
SERIAL NO

15531782

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A circuit for reading a programmed resistive state of resistive elements of a resistive memory, wherein each resistive element may be programmed to be in a first or a second resistive state, wherein the circuit includes a current integrator suitable for integrating a difference in current between a reading current flowing through a first of the resistive elements and a reference current.

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Patent Owner(s)

Patent OwnerAddress
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE3 RUE MICHEL ANGE PARIS 75015
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESPARIS FRANCE PARIS PARIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Javerliac, Virgile Grenoble, FR 23 317
Paoli, Pierre Grenoble, FR 2 9
Renane, Salim Grenoble, FR 2 6

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