Method for manufacturing MEMS double-layer suspension microstructure, and MEMS infrared detector
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United States of America Patent
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May 28, 2019
Grant Date -
Jul 20, 2017
app pub date -
Aug 20, 2015
filing date -
Dec 2, 2014
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Abstract
A method for manufacturing a MEMS double-layer suspension microstructure comprises steps of: forming a first film body on a substrate, and a cantilever beam connected to the substrate and the first film body; forming a sacrificial layer on the first film body and the cantilever beam; patterning the sacrificial layer located on the first film body to manufacture a recessed portion used for forming a support structure, the bottom of the recessed portion being exposed of the first film body; depositing a dielectric layer on the sacrificial layer; patterning the dielectric layer to manufacture a second film body and the support structure, the support structure being connected to the first film body and the second film body; and removing the sacrificial layer to obtain the MEMS double-layer suspension microstructure.
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