Methods of planarization for device fabrication with head features background
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United States of America Patent
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May 21, 2019
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app pub date -
Apr 10, 2018
filing date -
Apr 10, 2018
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Abstract
Methods of planarizing materials, such as where surface topographies are created as part of a thin film device fabrication process are described. These methods find particular application in the creation of nano-sized devices, where surface topographical features can be effectively planarized without adversely creating other surface topographies and/or causing deleterious effects a material junctions. Methods include the step of depositing a sacrificial layer overlying at least a portion of a first material layer and at least a portion of a backfilled second material at a junction between the first and second materials. The sacrificial layer substantially retains the surface topography of the microelectronic device. Chemical-mechanical planarization is performed on a surface of the sacrificial layer but leaving a remainder portion of the thickness of the sacrificial layer. Then, physical or dry chemical process is conducted for removing the remainder of the sacrificial layer and at least a portion of at least one of the first and second materials.
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