BiCMOS integration with reduced masking steps
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United States of America Patent
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May 14, 2019
Grant Date -
Oct 22, 2015
app pub date -
Mar 17, 2015
filing date -
Apr 16, 2014
priority date (Note) -
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Abstract
A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device is disclosed. The BiCMOS device includes a CMOS device in a CMOS region, a PNP bipolar device in a bipolar region, and an NPN bipolar device in the bipolar region. The NPN bipolar device has an extrinsic base being self-aligned with an emitter of the NPN bipolar device. The extrinsic base of the NPN bipolar device and an emitter of the PNP bipolar device share a P type dopant.
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