Methods and apparatus for a hybrid capacitively-coupled and an inductively-coupled plasma processing system
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United States of America Patent
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Apr 30, 2019
Grant Date -
Jun 2, 2016
app pub date -
Feb 3, 2016
filing date -
Sep 27, 2007
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Abstract
A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.
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