EUV pellicle fabrication methods and structures thereof
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United States of America Patent
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Apr 30, 2019
Grant Date -
Aug 11, 2016
app pub date -
Feb 5, 2015
filing date -
Feb 5, 2015
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Abstract
A method for fabricating a pellicle for EUV lithography processes includes placing a hard mask in contact with a surface of a substrate. In some embodiments, the hard mask is configured to pattern the surface of the substrate to include a first region and a second region surrounding the first region. By way of example, while the mask in positioned in contact with the substrate, an etch process of the substrate is performed to etch the first and second regions into the substrate. Thereafter, an excess substrate region is removed so as to separate the etched first region from the excess substrate region. In various embodiments, the etched and separated first region serves as a pellicle for an extreme ultraviolet (EUV) lithography process.
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