Method for tailoring the dopant profile in a laser crystal using zone processing
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 30, 2019
Grant Date -
Aug 30, 2018
app pub date -
Feb 23, 2018
filing date -
Aug 16, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A lasing medium having a tailored dopant concentration and a method of fabrication thereof is disclosed. The lasing medium has a single crystal having a continuous body having a selected length, wherein the crystal comprises dopant distributed along the length of the body to define a dopant concentration profile. In one embodiment, the dopant concentration profile results in a uniform heating profile. A method of fabricating a laser crystal having a tailored dopant concentration profile includes arranging a plurality of polycrystalline segments together to form an ingot, the polycrystalline segments each having dopant distributed, providing a crystal seed at a first end of the ingot, and moving a heating element along the ingot starting from the first end to a second end of the ingot, the moving heating element creating a moving molten region within the ingot while passing therealong.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully