Strain gated transistors and method

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United States of America Patent

PATENT NO 10263107
APP PUB NO 20180315852A1
SERIAL NO

15583732

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Abstract

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A strain gated transistor and associated methods are shown. In one example, a transistor channel region includes a metal dichalcogen layer that is stressed to improve electrical properties of the transistor.

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Patent Owner(s)

Patent OwnerAddress
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA1111 FRANKLIN STREET TWELFTH FLOOR OAKLAND CA 94607-5200

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chai, Yu New York, US 1 9
Ozkan, Cengiz S San Diego, US 28 357
Ozkan, Mihrimah San Diego, US 30 306

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