Method of manufacturing semiconductor device
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United States of America Patent
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Apr 16, 2019
Grant Date -
Jul 19, 2018
app pub date -
Dec 26, 2017
filing date -
Jan 13, 2017
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Abstract
A method of manufacturing a semiconductor device includes: forming a trench on a surface of a semiconductor substrate; forming an oxide film on side surfaces and a bottom surface of the trench; removing at least a part of the oxide film by dry etching from the bottom surface of the trench; and ion-implanting conductive impurities into the semiconductor substrate through the bottom surface of the trench after the dry etching. The dry etching is reactive ion etching in which etching gas including fluorocarbon based gas having a carbon atom ring structure, oxygen gas, and argon gas is used.
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