Light emitting diode and method of manufacturing thereof
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United States of America Patent
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Apr 2, 2019
Grant Date -
May 24, 2018
app pub date -
Dec 10, 2015
filing date -
Jun 4, 2015
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Abstract
The present application discloses a light emitting diode comprising a substrate; and a light emitting layer on the substrate. The light emitting layer comprises, an N-type doped layer; a quantum well active layer; and a P-type doped layer. At least one of the N-type doped layer and the P-type doped layer comprises an uneven layer adapted to concentrate light emitting from the light emitting layer.
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