High-brightness light-emitting diode with surface microstructures
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United States of America Patent
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Apr 2, 2019
Grant Date -
Jan 26, 2017
app pub date -
Oct 4, 2016
filing date -
Apr 8, 2014
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Abstract
A high-brightness light-emitting diode with surface microstructure and preparation and screening methods thereof are provided. The ratio of total roughened surface area of light transmission surface of a light emitting diode to vertically projected area is greater than 1.5, and the peak density of light transmission surface is not less than 0.3/um2. The higher the ratio of total roughened surface area of an epitaxial wafer to vertically projected area and the higher the number of peak over the critical height within a unit area, the more beneficial to improve light extraction efficiency of the epitaxial wafer. As a result, light extraction efficiency of the epitaxial wafer is greatly improved.
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