Integration of gate structures and spacers with air gaps

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United States of America Patent

PATENT NO 10236358
SERIAL NO

15784445

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Abstract

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Structures for a field-effect transistor and methods for forming a field-effect transistor. The structure includes a gate structure having a sidewall and a sidewall spacer arranged adjacent to the sidewall of the gate structure. The sidewall spacer includes an energy removal film material and one or more air gaps in the energy removal film material.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES U S INC400 STONEBREAK ROAD EXTENSION MALTA NY 12020

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Patil, Suraj K Chino Hills, US 24 154
Singh, Jagar Clifton Park, US 124 468

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