Termination implant enrichment for shielded gate MOSFETs
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United States of America Patent
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Mar 19, 2019
Grant Date -
Nov 1, 2018
app pub date -
Apr 28, 2017
filing date -
Apr 28, 2017
priority date (Note) -
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status (Latency Note)
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Abstract
In a general aspect, a power semiconductor device can include a first trench shield electrode and a second trench shield electrode defined in a semiconductor region, the first and second trench shield electrodes each having a first portion disposed in an active region and a second portion disposed in a termination region. A trench of the first trench shield electrode and a trench of the second trench shield electrode can define a mesa of the semiconductor region therebetween. The device can further include an implant enrichment region disposed in the termination region, the implant enrichment region can be intersected by the first trench shield electrode and the second trench shield electrode, and can have a portion disposed in the mesa of the semiconductor region, the portion extending from the trench of the first trench shield electrode to the trench of the second trench shield electrode.
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