Field effect transistor structure for reducing contact resistance

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10211205
APP PUB NO 20170317082A1
SERIAL NO

15139365

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Abstract

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A circuit component comprises a row of transistors. The row may contain a first active FET with a source region and a drain region. The row may also contain a first active dummy FET that shares the source region and that also has a diffusion region. The row may also contain a second active FET and a second active dummy FET, positioned such that the active dummy FETs are located between the active FETs on the row. The row may also have an end positioned such that the first active dummy FET is between the end and the first active FET. A supply of current may be electrically connected to the source diffusion regions. A load region may be electrically connected to the drain region. The first active FET and the first active dummy FET may have gates that share a voltage source or that have their own voltage source.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Den, Hartog Brent R Rochester, US 3 13
Lukes, Eric J Stewartville, US 11 30
Paschal, Matthew J Rochester, US 13 204
Phan, Nghia V Rochester, US 7 31
Richetta, Raymond A Rochester, US 28 226
Rosno, Patrick L Rochester, US 13 32
Schmerbeck, Timothy J Mantorville, US 14 130
Yilma, Dereje G Rochester, US 9 31

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