Semiconductor device including built-in crack-arresting film structure
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United States of America Patent
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Feb 19, 2019
Grant Date -
Aug 3, 2017
app pub date -
Apr 19, 2017
filing date -
Nov 18, 2014
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Abstract
A wafer-to-wafer semiconductor device includes a first wafer substrate having a first bonding layer formed on a first bulk substrate layer. A second wafer substrate includes a second bonding layer formed on a second bulk substrate layer. The second bonding layer is bonded to the first bonding layer to define a bonding interface. At least one of the first wafer substrate and the second wafer substrate includes a crack-arresting film layer configured to increase a bonding energy of the bonding interface.
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