Method for photo-lithographic processing in semiconductor device manufacturing

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United States of America Patent

PATENT NO 10211050
APP PUB NO 20160358769A1
SERIAL NO

15237840

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Abstract

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There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDTOKYO 107-6325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iseki, Tomohiro Koshi, JP 31 192
Oyama, Kenichi Tokyo, JP 29 312
Tsuruda, Toyohisa Koshi, JP 29 45
Yaegashi, Hidetami Tokyo, JP 54 1908
Yamato, Masatoshi Nirasaki, JP 12 33

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