Oxide semiconductor film including indium, tungsten and zinc and thin film transistor device
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United States of America Patent
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Jan 29, 2019
Grant Date -
Jan 12, 2017
app pub date -
Aug 21, 2015
filing date -
Jan 26, 2015
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Abstract
There is provided an oxide semiconductor film composed of nanocrystalline oxide or amorphous oxide, wherein the oxide semiconductor film includes indium, tungsten and zinc, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide semiconductor film is higher than 0.5 atomic % and equal to or lower than 5 atomic %, and an electric resistivity is equal to or higher than 10−1 Ωcm. There is also provided a semiconductor device including the oxide semiconductor film.
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