Method of manufacturing semiconductor device using a plurality of etch stop layers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 29, 2019
Grant Date -
May 12, 2016
app pub date -
Jun 23, 2015
filing date -
Nov 12, 2014
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of manufacturing the semiconductor device includes providing a first interlayer dielectric layer having a conductive pattern, sequentially forming a first etch stop layer, a second etch stop layer, a second interlayer dielectric layer and a mask pattern on the first interlayer dielectric layer, forming an opening in the second interlayer dielectric layer using the mask pattern as a mask, the opening exposing the second etch stop layer, and performing an etching process including simultaneously removing the mask pattern and the second etch stop layer exposed by the opening to expose the first etch stop layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully