Planarized interlayer dielectric with air gap isolation
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United States of America Patent
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Jan 22, 2019
Grant Date -
Jun 21, 2018
app pub date -
Feb 15, 2018
filing date -
Dec 14, 2015
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Abstract
A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.
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