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Abstract

A method for manufacturing a semi-conducting material including a layer of nitride of a group 13 element comprising active areas for manufacturing electronic components, and inactive areas, the active and inactive areas extending on a front face of the layer of nitride, the method comprising steps consisting of:

using a maskcomprising a plurality of apertures each defining an active area pattern on the initial substrate,growing the layer of nitride,receiving a theoretical pattern pitch corresponding to a desired distance between two adjacent active area patterns on the front face of the layer of nitride,calculating at least one mask pitch different from the theoretical pattern pitch for compensating shifts in the active area patterns, the mask pitch corresponding to a distance between two adjacent apertures of the protective mask.

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First Claim