Ink for forming P layers in organic electronic devices
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United States of America Patent
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Jan 8, 2019
Grant Date -
May 18, 2017
app pub date -
Nov 25, 2014
filing date -
Nov 26, 2013
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Abstract
An ink that can form a P-type layer in an organic electronic device. The ink includes at least nanoparticles of P-type semiconductor metal oxide(s) selected from among V2O5, NiO, MoO3, WO3 and mixtures thereof and an ionomer, the ionomer being a perfluorosulfonate copolymer, the mass ratio between the ionomer and the nanoparticles of P-type semiconductor metal oxide(s) selected from among V2O5, NiO, MoO3, WO3 and mixtures thereof being between 0.005 and 0.115. Also, a P layer of an organic electronic device, an electronic device and the formation method thereof.
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