Method for manufacturing semiconductor device
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United States of America Patent
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Jan 1, 2019
Grant Date -
Jul 12, 2018
app pub date -
Jan 2, 2018
filing date -
Jan 12, 2017
priority date (Note) -
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Abstract
A manufacturing method of a semiconductor device including a step of forming a silicon layer over a formation substrate, a step of forming a resin layer over the silicon layer, a step of forming a transistor over the resin layer, a step of forming a conductive layer over the silicon layer and the resin layer, and a step of separating the formation substrate and the transistor. The resin layer has an opening over the silicon layer. The conductive layer is in contact with the silicon layer through the opening in the resin layer. In the step of separating the formation substrate and the transistor, the silicon layer is irradiated with light, so that silicon contained in the silicon layer reacts with a metal contained in the conductive layer, and a metal silicide layer is formed.
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