Semiconductor device and method
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United States of America Patent
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Jan 1, 2019
Grant Date -
May 31, 2018
app pub date -
Oct 5, 2017
filing date -
Nov 29, 2016
priority date (Note) -
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Abstract
In an embodiment, a method includes: patterning a plurality of mandrels over a mask layer; forming an etch coating layer on top surfaces of the mask layer and the mandrels; depositing a dielectric layer over the mask layer and the mandrels, a first thickness of the dielectric layer along sidewalls of the mandrels being greater than a second thickness of the dielectric layer along the etch coating layer; removing horizontal portions of the dielectric layer; and patterning the mask layer using remaining vertical portions of the dielectric layer as an etching mask.
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