Method of making a graphene base transistor with reduced collector area

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United States of America Patent

PATENT NO 10158009
APP PUB NO 20170125557A1
SERIAL NO

15408813

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Abstract

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A method of making a graphene base transistor with reduced collector area comprising forming an electron injection region, forming an electron collection region, and forming a base region wherein the base region comprises one or more sheets of graphene and wherein the base region is intermediate the electron injection region and the electron collection region and forms electrical interfaces therewith.

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Patent Owner(s)

Patent OwnerAddress
THE GOVERNMENT OF THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVYNAVAL RESEARCH LABORATORY 875 NORTH RANDOLPH STREET SUITE 1425 ARLINGTON VA 22203

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anderson, Travis J Alexandria, US 52 746
Koehler, Andrew D Alexandria, US 25 593
Kub, Francis J Arnold, US 110 4131

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