Inspection of a lithographic mask that is protected by a pellicle
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United States of America Patent
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Dec 18, 2018
Grant Date -
Sep 29, 2016
app pub date -
Jun 8, 2016
filing date -
Jul 23, 2013
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Abstract
A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask.
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