Diffusion assisted crystal hydrothermal and flux growth

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United States of America Patent

PATENT NO 10156026
APP PUB NO 20170306525A1
SERIAL NO

14999312

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Abstract

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The purpose of diffusion assisted crystal hydrothermal growth is to facilitate a greatly increased crystal growth rate that would save time that is precious in such a material and manpower costly process. The assisted crystal growth itself requires the utilization of a piezoelectric shaker connected to the autoclave in which most industrial hydrothermal crystals are grown. The waveform can be modulated to induce transport of nutrient in a singular direction, customized to the topology of the apparatus. As it stands currently, the growth of most crystals that require autoclaves for their production can take anywhere from 3 months to up to 2 years, and accordingly carries many costs, particularly electricity and supervision of the autoclave(s), and other issues that may arise during the growth. While the product of this labor results in high-quality crystals, in reality, these are not at all what is needed outside of the laboratory environment. Using the assisted crystal hydrothermal growth process, average crystal growth can be cut in half, with the resulting crystals consequently being of a slightly lower quality, though still sufficient for most engineering purposes. Another advantage of using a piezoelectric shaker is that an additional sensor can be added to the autoclave to monitor the health of the autoclave using trending data obtained during the growth.

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Patent Owner(s)

Patent OwnerAddress
SILO TECH INC1197 E LOS ANGELES AVENUE C311 SIMI VALLEY CA USA 93065

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Smith, Daniel Northridge, US 329 5555

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