Metal etchant compositions and methods of fabricating a semiconductor device using the same
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United States of America Patent
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Dec 18, 2018
Grant Date -
Jul 14, 2016
app pub date -
Mar 21, 2016
filing date -
Jun 23, 2014
priority date (Note) -
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Abstract
The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.
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International Classification(s)
- C09K:MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED ....
- C03C:CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREO....
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- C23F:NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM S....
- B44C:PRODUCING DECORATIVE EFFECTS
- C25F:PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIAL....
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