Group III heterojunction semiconductor device having silicon carbide-containing lateral diode

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United States of America Patent

PATENT NO 10153276
APP PUB NO 20160181240A1
SERIAL NO

14573062

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Abstract

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In an embodiment, a semiconductor device includes a silicon carbide layer comprising a lateral diode, and a Group III nitride based semiconductor device arranged on the silicon carbide layer.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AUSTRIA AG2 SIEMENS STREET VILLACH AUSTRIA VILLACH CARINTHIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hosseini, Khalil Weihmichl, DE 90 609
Kahlmann, Frank Neubiberg, DE 10 160
Mauder, Anton Kolbermoor, DE 350 3377

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