Synaptic transistor based on metal nano-sheet and method of manufacturing the same

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United States of America Patent

PATENT NO 10147897
APP PUB NO 20180083212A1
SERIAL NO

15703366

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Abstract

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A synaptic transistor based on a metal nano-sheet and a method thereof are provided. A self-assembled floating gate layer is formed. The floating gate layer prevents leakage of electric charges transmitted from a channel layer, and also temporarily stores the transmitted electric charge. Thus, the synaptic transistor may be used as an effective memory for storing.

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Patent Owner(s)

Patent OwnerAddress
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY123 CHEOMDANGWAGI-RO BUK-GU GWANGJU 61005 61005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Chang Hyun Gwangju, KR 244 2507
Yoon, Myung Han Gwangju, KR 5 7

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