Production of thin film solar grade silicon on metals by electrodeposition from silicon dioxide in a molten salt

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United States of America Patent

PATENT NO 10147836
APP PUB NO 20150107657A1
SERIAL NO

14404746

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Abstract

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A method of producing a silicon film includes: forming a deposition composition comprising silicon dioxide dispersed in a molten salt; placing a metal substrate and a counter electrode in the composition; and passing a reducing current between the metal substrate and the counter electrode, wherein the reducing current causes reduction of silicon dioxide particles to form a silicon film on the metal substrate.

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Patent Owner(s)

Patent OwnerAddress
BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM201 WEST 7TH STREET AUSTIN TX 78701

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bard, Allen J Austin, US 57 2516
Cho, Sung Ki Austin, US 4 0
Fan, Fu-Ren F Austin, US 10 57

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