Semiconductor element having grooves which divide an electrode layer, and method of forming the grooves
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United States of America Patent
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Nov 13, 2018
Grant Date -
Sep 1, 2016
app pub date -
May 11, 2016
filing date -
Jun 7, 2013
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Abstract
A semiconductor element is disclosed including a construction with electrode-dividing grooves, in which a dark current is smaller than in existing examples. A method of forming such grooves is also disclosed. In an embodiment, grooves, which electrically divide an electrode layer formed on the surface of a substrate, are formed with a V-shaped cross-sectional shape, groove side walls in the electrode layer, constituting the grooves, being sloping surfaces. An embodiment of the method of forming the grooves includes using a dicing blade having a blade distal end portion which is sharpened into a V-shape to cut a semiconductor wafer in which multiple patterns of semiconductor elements including an electrode layer on the surface of a substrate are formed, forming the grooves having a V-shaped cross-sectional shape which divide the electrode layer in each semiconductor element.
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