Anti-ESD photomask and method of forming the same

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United States of America Patent

PATENT NO 10126643
APP PUB NO 20180164676A1
SERIAL NO

15419338

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Abstract

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The present disclosure provides an anti-ESD photomask and method of the same. In the method, a substrate is provided first. Then, a light-shielding layer is formed on a portion of the substrate, in which the light-shielding layer includes a Mo-containing layer. Next, a surface treatment operation is performed to convert a surface of the portion of the substrate and a surface of the light-shielding layer into a non-conductive layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kung, Chun-Hung Hsinchu, TW 26 21
Lai, Hao-Zhang Hsinchu, TW 1 0

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