Semiconductor device
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United States of America Patent
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Nov 6, 2018
Grant Date -
Jul 20, 2017
app pub date -
Jan 20, 2016
filing date -
Jan 20, 2016
priority date (Note) -
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Abstract
A semiconductor device includes a substrate, and interposer layers. The substrate has a first region, and a second region adjacent the first region. The interposer layers are sequentially stacked on the substrate. Each of the interposer layers has an active region and an open region, which respectively correspond to the first region and the second region of the substrate. Each of the interposer layers includes a device layout pattern, and a stress release structure. The device layout pattern is formed within the active region. The stress release structure is formed within the open region, and includes openings.
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