Method for manufacturing crystal film

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United States of America Patent

PATENT NO 10115888
APP PUB NO 20170170384A1
SERIAL NO

15444879

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Abstract

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A method for manufacturing a crystal film including: forming a Zr film on a substrate heated to 700° C. or more by a vapor deposition method using a vapor deposition material having a Zr single crystal; forming a ZrO2 film on said Zr film on a substrate heated to 700° C. or more, by a vapor deposition method using said vapor deposition material having a Zr single crystal, and oxygen; and forming a Y2O3 film on said ZrO2 film on a substrate heated to 700° C. or more, by a vapor deposition method using a vapor deposition material having Y, and oxygen.

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Patent Owner(s)

Patent OwnerAddress
KRYSTAL INC2-1-17 ASUTOPIA UBE-SHI YAMAGUCHI 755-0152

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Honda, Yuuji Chiba, JP 53 491
Kijima, Takeshi Chiba, JP 167 1581

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