Multi-zone temperature control for semiconductor wafer
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United States of America Patent
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Oct 30, 2018
Grant Date -
Jul 30, 2015
app pub date -
Apr 7, 2015
filing date -
Feb 13, 2009
priority date (Note) -
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status (Latency Note)
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Abstract
An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.
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International Classification(s)
- C23C:COATING METALLIC MATERIAL; COATING MATERIAL WITH M....
- H01J:ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- G06Q:DATA PROCESSING SYSTEMS OR METHODS, SPECIALLY ADAP....
- G06F:ELECTRIC DIGITAL DATA PROCESSING
- G06K:RECOGNITION OF DATA; PRESENTATION OF DATA; RECORD ....
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