High-efficiency microstructured semiconductor neutron detectors and process to fabricate high-efficiency microstructured semiconductor neutron detectors
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United States of America Patent
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Oct 23, 2018
Grant Date -
Jan 12, 2017
app pub date -
Jul 11, 2016
filing date -
Jul 11, 2015
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Abstract
A semiconductor neutron detector and a semiconductor process is provided to manufacture a semiconductor neutron detector. First, a substrate with flat surface having a dielectric layer is formed thereon is provided. Thereafter, a masking pattern is applied and etched into the dielectric layer to expose semiconductor features on opposite sides of the substrate. The semiconductor substrate is submerged into an etchant composed of a semiconductor etching solution to etch deep cavities into the substrate in the exposed regions. Afterwards, dopant impurities are introduced and are driven into the semiconductor, under high temperature, into opposite sides of the etched features to produce one or more rectifying junctions. Afterwards, LiF and/or B particles are forced into the cavities through high velocity methods.
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