Apparatus and method for chemical mechanical polishing process control
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United States of America Patent
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Oct 9, 2018
Grant Date -
Dec 3, 2015
app pub date -
Aug 10, 2015
filing date -
Nov 24, 2010
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Abstract
An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.
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