Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge features
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United States of America Patent
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Oct 2, 2018
Grant Date -
Mar 16, 2017
app pub date -
Nov 28, 2016
filing date -
Feb 11, 2010
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Abstract
Embodiments of an ohmic contact structure for a Group III nitride semiconductor device and methods of fabrication thereof are disclosed. In general, the ohmic contact structure has a root-mean-squared (RMS) surface roughness of less than 10 nanometers, and more preferably less than or equal to 7.5 nanometers, and more preferably less than or equal to 5 nanometers, and more preferably less than or equal to 2 nanometers, and even more preferably less than or equal to 1.5 nanometers.
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