Method of fabricating x-ray absorbers for low-energy x-ray spectroscopy
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United States of America Patent
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Sep 11, 2018
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Mar 29, 2018
app pub date -
Sep 29, 2016
filing date -
Sep 29, 2016
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Abstract
A method of forming low-energy x-ray absorbers. Sensors may be formed on a semiconductor, e.g., silicon, wafer. A seed metal layer, e.g., gold, is deposited on the wafer and patterned into stem pads for electroplating. Stems, e.g., gold, are electroplated from the stem seed pads through a stem mask. An absorber layer, e.g., gold, is deposited on the wafer, preferably e-beam evaporated. After patterning the absorbers, absorber and stem mask material is removed, e.g., in a solvent bath and critical point drying.
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